for general purpose applications case:jedec do--35,glass case weight: approx. 0.13 gram (ratings at 25 ambient temperature unless otherw ise specified) min. units v |a v pf ns k/w storage temperature range t stg reverse breakdow n voltage @ i r =10 a symbols v r electrical characteristics i r thermal resistance junction to ambient air c j 0.6 voltage range: 40 -- 20 v current: 400 mw do - 35(gl ass) mw a peak reverse voltage 400 1) symbols polarity: color band denotes cathode end junction tenperature pow er dissipation (inf inite heat sink) absolute ratings(limiting values) v rrm p tot i fsm units v fast switching and low logic level applications metal silicon schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices,steering,biasing and coupling diodes for r ja leakage current @ v r =50v junction capacitance @ v r =0v,f=1mhz reverse recovery time @ i f =i r =50ma to 200ma,recover to 0.1 i r forw ard voltage drop @ i f =20ma 250 1)valid provided that leads at a distance of 4mm from case are kept at ambient temperature single cycle surge 60hz sine wave 5 50 15 i f =200ma v f t rr max. ty p. 10 t j 0.37 -55 ---+ 150 125 sd103a sd103b SD103C 40 30 20 sd103a sd103b SD103C 40 30 20 sd103a,vr=30v sd103b,vr=20v SD103C,vr=10v - - - - - - - - - - - - forward continuous current i (av) 350 m a dimensions in millimeters sd103 a-sd103 c small signal switching diode s features m echani cal d ata http://www.luguang.cn mail:lge@luguang.cn
fi g. 3 -- typi cal vari ati on of reverse current at xxxxxxxxx vari ati on temperatures fi g. 1 -- typi cal vari ati on of fwd. current vs fwd. xxxxxxxx- voltage for pri mary conduction through the xxxxxxxx- schottky barrier fi g. 2 -- typi cal forward conducti on curve of xxxxx combi nati on schottky barri er and pn xxxxx juncti on guard ri ng fig.4 -- typical capacitance curve as a juncti on of reverse voltage i ? forward current ( ma) 0.001 0.010 0.100 1.000 10.000 100.000 1000.000 0 100 200 300 400 500 600 700 800 900 1000 v f ? forward voltage ( mv ) f 1000 100 10 1 0.1 0.01 i ? forward current (a) 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 v f ? forward voltag e(v) f 0 5 10 15 20 25 30 0 5 10 15 20 25 30 v r ? reverse voltag e(v) c ? diode capacitance ( pf ) d f=1mhz 1 10 100 1000 10000 0 20 40 60 80 100 120 140 160 t j ? junction temperature ( c) i ? reverse current (a ) r sd103a-SD103C small signal switching diode s ratings and charactieristic curves http://www.luguang.cn mail:lge@luguang.cn
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